发明名称 |
SELECTIVE ATOMIC LAYER DEPOSITION PROCESS UTILIZING PATTERNED SELF ASSEMBLED MONOLAYERS FOR 3D STRUCTURE SEMICONDUCTOR APPLICATIONS |
摘要 |
Methods for forming fin structure with desired materials formed on different locations of the fin structure using a selective deposition process for three dimensional (3D) stacking of fin field effect transistor (FinFET) for semiconductor chips are provided. In one embodiment, a method of forming a structure with desired materials on a substrate includes forming a patterned self-assembled monolayer on a circumference of a structure formed on a substrate, wherein the patterned self-assembled monolayer includes a treated layer formed among a self-assembled monolayer, and performing an atomic layer deposition process to form a material layer predominantly on the self-assembled monolayer from the patterned self-assembled monolayer. |
申请公布号 |
WO2015156912(A1) |
申请公布日期 |
2015.10.15 |
申请号 |
WO2015US17078 |
申请日期 |
2015.02.23 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
NEMANI, SRINIVAS D.;YIEH, ELLIE Y.;GODET, LUDOVIC;FAN, YIN |
分类号 |
H01L21/336;H01L21/205 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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