发明名称 |
MECHANICALLY GATED ELECTRICAL SWITCHES BY CREASING OF PATTERNED METAL/ELASTOMER BILAYER FILMS |
摘要 |
Strain-gated logic devices are important for the development of advanced flexible electronics. Using a dual-monolayer-promoted film-transfer technique, a flexible multilayer structure capable of undergoing large compressive deformation was prepared. Formation of a crease in the gap between electrodes at a geometrically tunable strain leads to formation of an electrical connection in a reversible and reproducible fashion. A strain-gated electrical switch includes at least two conductive electrodes disposed on a surface of an elastomer substrate, the at least two conductive electrodes forming a gap between the at least two electrodes in an off-state of the strain-gated electrical switch, the gap diminishing under compressive strain to form a crease, the compressive strain pressing the at least two electrodes into contact with each other in an on-state of the strain-gated electrical switch. |
申请公布号 |
US2015294805(A1) |
申请公布日期 |
2015.10.15 |
申请号 |
US201514682644 |
申请日期 |
2015.04.09 |
申请人 |
UMASS Amherst |
发明人 |
Hayward Ryan C.;Chen Dayong;Xu Bin |
分类号 |
H01H1/24;C23C14/30;C23C14/04;H01H1/02;H01H11/04 |
主分类号 |
H01H1/24 |
代理机构 |
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代理人 |
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主权项 |
1. A strain-gated electrical switch comprising at least two conductive electrodes disposed on a surface of an elastomer substrate, the at least two conductive electrodes forming a gap between the at least two electrodes in an off-state of the strain-gated electrical switch, the gap diminishing under compressive strain to form a crease, the compressive strain pressing the at least two electrodes into contact with each other in an on-state of the strain-gated electrical switch. |
地址 |
Amherst MA US |