发明名称 |
NAND-TYPE FLASH MEMORY DEVICE AND METHOD OF PROGRAMMING THE SAME |
摘要 |
A NAND-type flash memory device and method for programming the NAND-type flash memory device are provided. The method may include applying a voltage of 0 V to an unselected string select line, applying the voltage of 0 V to a selected bit line, applying a supply voltage to a selected string select line, and applying a dummy pass voltage to a dummy word line, the dummy pass voltage being in a range between 0 V to a pass voltage. The method may further include applying the supply voltage to an unselected bit line, applying the pass voltage to a selected word line, applying the pass voltage to an unselected word line; and applying a program voltage to the selected word line. |
申请公布号 |
US2015294726(A1) |
申请公布日期 |
2015.10.15 |
申请号 |
US201514672372 |
申请日期 |
2015.03.30 |
申请人 |
SIM JAE-SUNG;KANG JOO-HEON;SHIN KYUNG-JUN |
发明人 |
SIM JAE-SUNG;KANG JOO-HEON;SHIN KYUNG-JUN |
分类号 |
G11C16/10;G11C16/04 |
主分类号 |
G11C16/10 |
代理机构 |
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代理人 |
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主权项 |
1. A method of programming a NAND-type flash memory device, the method comprising:
applying the supply voltage to a selected string select line; applying a dummy pass voltage to a dummy word line, the dumpy pass voltage being in a range between 0 V to a pass voltage; applying a supply voltage to an unselected bit line; applying a voltage of 0 V to a selected bit line; applying the pass voltage to a selected word line; applying the pass voltage to an unselected word line; and applying a program voltage to the selected word line. |
地址 |
HWASEONG-SI KR |