APPARATUS AND PROCESS FOR PRODUCING A SINGLE CRYSTAL OF SILICON

摘要

An apparatus for producing a single crystal of silicon comprises a plate with a top side, an outer edge, and an inner edge, a central opening adjoining the inner edge, and a tube extending from the central opening to beneath the bottom side of the plate;;a device for metering granular silicon onto the plate; a first induction heating coil above the plate, provided for melting of the granular silicon deposited;;a second induction heating coil positioned beneath the plate, provided for stabilization of a melt of silicon, the melt being present upon a growing single crystal of silicon. The top side of the plate consists of ceramic material and has elevations, the distance between the elevations in a radial direction being not less than 2 mm and not more than 15 mm.

主权项

1. An apparatus for producing a single crystal of silicon from granular silicon, comprising:
a plate having an outer edge, an inner edge, and a top side, a central opening adjoining the inner edge, and a tube which extends from the central opening to beneath a bottom side of the plate; a device for depositing granular silicon onto the top side of the plate; a first induction heating coil which is arranged above the plate configured to melt the granular silicon deposited; a second induction heating coil which positioned beneath the plate, configured to stabilize a melt of silicon present upon a growing single crystal of silicon, wherein the top side of the plate consists of ceramic material and has elevations rising above a surface of the plate, the distance between the middles of adjacent elevations in a radial direction being not less than 2 mm and not more than 15 mm.