SEMICONDUCTOR DEVICE AND FORMATION THEREOF

摘要

A semiconductor device and formation methods are provided. The semiconductor device includes a first metal alloy over a first active region of a fin and a second metal alloy over a second active region of the fin. A conductive layer is over a channel region of the fin. A semiconductor layer is over the conductive layer. The conductive layer over the channel region suppresses current leakage and the semiconductor layer over the conductive layer reduces electro flux from a source to a drain, as compared to a channel region that does not have such a conductive layer or a semiconductor layer over a conductive layer. The semiconductor device having the first metal alloy as at least one among the source or drain requires a lower activation temperature than a semiconductor device that does not have a metal alloy as a source or a drain.