发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of improving reliability.SOLUTION: A method of manufacturing a semiconductor device comprises the steps of: forming a source electrode 20 and a drain electrode 22 on a surface of a nitride semiconductor layer containing gallium; applying oxygen plasma treatment having power density of 0.2 to 0.3 W/cmto a surface of a nitride semiconductor layer 18 (cap layer) between the source electrode 20 and the drain electrode 22, after forming the source electrode 20 and the drain electrode 22, and thereby forming a conductive layer 26 having a gallium composition larger than that of the nitride semiconductor layer 18 before the oxygen plasma treatment; forming an insulating film on the upper surface of the nitride semiconductor layer after the conductive layer 26 is formed; exposing the nitride semiconductor layer 18 by removing a part of the insulating film on the conductive layer 26; and forming a gate electrode 24 on the exposed surface of the nitride semiconductor layer 18. |
申请公布号 |
JP2015181190(A) |
申请公布日期 |
2015.10.15 |
申请号 |
JP20150105355 |
申请日期 |
2015.05.25 |
申请人 |
SUMITOMO ELECTRIC DEVICE INNOVATIONS INC |
发明人 |
NISHI MASAHIRO |
分类号 |
H01L21/338;H01L29/778;H01L29/812 |
主分类号 |
H01L21/338 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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