Semiconductor Device with Metal-Filled Groove in Polysilicon Gate Electrode

摘要

A semiconductor device includes a semiconductor substrate, a body region of a first conductivity type in the substrate, a source region of a second conductivity type adjacent the body region, and a trench extending into the substrate. The trench contains a polysilicon gate electrode insulated from the substrate. The device further includes a dielectric layer on the substrate, a gate metallization on the dielectric layer and covering part of the substrate and a source metallization on the dielectric layer and electrically connected to the source region. The gate metallization includes two spaced apart fingers. The source metallization is spaced apart from the gate metallization and covers a different part of the substrate than the gate metallization. A metal-filled groove in the polysilicon gate electrode is electrically connected to the two spaced apart fingers, and extends along a length of the trench directly underneath at least part of the source metallization.

主权项

1. A semiconductor device, comprising:
a semiconductor substrate; a body region of a first conductivity type in the substrate; a source region of a second conductivity type opposite the first conductivity type adjacent the body region; a trench extending into the substrate adjacent the source and the body regions, the trench containing a polysilicon gate electrode insulated from the substrate by a dielectric material; a dielectric layer on the substrate; a gate metallization on the dielectric layer and covering part of the substrate, the gate metallization comprising two spaced apart fingers; a source metallization on the dielectric layer and electrically connected to the source region, the source metallization being arranged between the two spaced apart fingers and covering a different part of the substrate than the gate metallization; and a metal-filled groove within the polysilicon gate electrode and electrically connected to the two spaced apart fingers by one or more conductive vias extending through the dielectric layer, the metal-filled groove extending between the two spaced apart fingers directly underneath at least part of the source metallization and insulated from the source metallization by the dielectric layer.