| 发明名称 |
MEMS DEVICE AND METHOD OF FORMING THE SAME |
| 摘要 |
According to an exemplary embodiment, a method of forming a MEMS device is provided. The method includes the following operations: providing a substrate; forming a first layer formed of titanium nitride over the substrate; and forming a second layer formed of titanium over the first layer. According to an exemplary embodiment, a MEMS device is provided. The device includes: a substrate; a first layer formed of titanium nitride over the substrate; and a second layer formed of titanium over the first layer. According to an exemplary embodiment, a getter structure is provided. The structure includes: a first layer formed of titanium nitride over a substrate; and a second layer formed of titanium over the first layer. |
| 申请公布号 |
US2015291416(A1) |
申请公布日期 |
2015.10.15 |
| 申请号 |
US201414252831 |
申请日期 |
2014.04.15 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company Limited |
发明人 |
LIANG CHIN-WEI;TSAI CHENG-YUAN;TSAI CHIA-SHIUNG |
| 分类号 |
B81B7/00;B81C1/00 |
主分类号 |
B81B7/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a MEMS device, comprising:
providing a substrate; forming a first layer formed of titanium nitride over the substrate; and forming a second layer formed of titanium over the first layer. |
| 地址 |
Hsinchu TW |
