发明名称 HIGH-FREQUENCY AMPLIFIER CIRCUIT
摘要 A high-frequency amplifier circuit (10) includes a high-frequency amplifier (101) and a bias circuit (20). The bias circuit (20) includes bias control elements (102, 103). An emitter of the bias control element (102) is connected to a base of the amplifier (101) via a resistor (201). An emitter of the bias control element (103) is connected to a collector of a switch element (104) via a resistor (203). The switch element (104) is a common emitter. A resistor (204) is connected between the emitter of the bias control element (102) and the emitter of the bias control element (103). A control voltage (VCTL) is applied to bases of the bias control elements (102, 103). A bias current adjustment voltage (VLIN) corresponding to an operation mode is applied to a base of the switch element (104).
申请公布号 US2015295549(A1) 申请公布日期 2015.10.15
申请号 US201514746896 申请日期 2015.06.23
申请人 Murata Manufacturing Co., Ltd. 发明人 HIROOKA Hiroyuki
分类号 H03F3/19;H03F1/02;H03F1/56 主分类号 H03F3/19
代理机构 代理人
主权项 1. A high-frequency amplifier circuit comprising: a high-frequency amplifier that amplifies a high-frequency signal; a bias circuit that supplies a bias current to the high-frequency amplifier; and a control voltage input terminal that determines the bias current; wherein the bias circuit includes a 1st bias control element that supplies a 1st bias current to the high-frequency amplifier in accordance with the control voltage, a 2nd bias control element that supplies a 2nd bias current to the high-frequency amplifier in accordance with the control voltage, and a bias adjustment circuit that adjusts a potential difference between a 1st bias current output terminal of the 1st bias control element and a 2nd bias current output terminal of the 2nd bias control element.
地址 Kyoto JP