LUMINESCENT DEVICE AND MANUFACTURING METHOD FOR LUMINESCENT DEVICE AND SEMICONDUCTOR DEVICE

摘要

A luminescent device and a manufacturing method for the luminescent device and a semiconductor device which are free from occurrence of cracks in a compound semiconductor layer due to the internal stress in the compound semiconductor layer at the time of chemical lift-off. The luminescent device manufacturing method includes forming a device region on part of an epitaxial substrate through a lift-off layer; forming a sacrificing portion, being not removed in a chemical lift-off step, around device region on epitaxial substrate; covering epitaxial substrate and semiconductor layer and forming a covering layer such that level of surface thereof in the region away from device region is lower than luminescent layer surface; removing covering layer on semiconductor layer, and that on sacrificing portion surface; forming a reflection layer on covering layer surface and semiconductor layer surface; and forming a supporting substrate by providing plating on reflection layer.

主权项

1. A manufacturing method for a semiconductor device, comprising:
a device region formation step of forming a device region constituted by a semiconductor layer on part of an epitaxial substrate through a lift-off layer; a sacrificing portion formation step of forming a sacrificing portion, being not removed in a later-mentioned chemical lift-off step, around the device region on the epitaxial substrate; a covering step of forming a covering layer, covering the epitaxial substrate except part on the semiconductor and on the sacrificing layer; a foundation layer formation step of forming a foundation layer on a surface on the epitaxial substrate including part on the semiconductor and on the sacrificing layer and a covering layer surface; a plating step of forming a supporting substrate by providing plating on the foundation layer; a covering layer removing step of dissolution removing of the covering layer; a chemical lift-off step of separating between the semiconductor layer and the epitaxial substrate by dissolution removing of the lift-off layer; and a sacrificing portion removing step of separating between the epitaxial substrate and the foundation layer at the sacrificing portion after the chemical lift-off step.