发明名称 |
INFRARED PHOTOVOLTAIC DEVICE |
摘要 |
A hybrid photovoltaic (PV) device according comprises a semiconductor substrate, a semiconductor photovoltaic (PV) layer on one side of said substrate, a metal layer on top of said PV layer, a first electrode layer on top of said metal layer, and a bottom metal electrode on the opposite side of said substrate from said PV layer, wherein said metal layer forms a Shottcky junction between said metal layer and said PV layer. Because of existence of the Shottcky junction, the PV cell permits light to electricity conversion over a wide-range of light wavelengths, from visible light (between 350 nm to 900 nm wavelength) to infrared light (over 900 nm wavelength). Also described is a method for manufacturing a hybrid PV device. The method of manufacturing comprises performing the steps of: cleaning a semiconductor substrate; introducing an inert gas under vacuum and a high temperature to form a semiconductor PV layer having a high resistivity on the top surface of said substrate; forming a metal layer over said PV layer to create a Shottcky junction between said metal layer and said PV layer; forming a transparent layer over the top of said metal layer; and forming a metal bottom electrode on the bottom surface of said substrate. |
申请公布号 |
US2015295117(A1) |
申请公布日期 |
2015.10.15 |
申请号 |
US201414217078 |
申请日期 |
2014.03.17 |
申请人 |
Briceno Jose;MATSUMARU Koji |
发明人 |
Briceno Jose;MATSUMARU Koji |
分类号 |
H01L31/078;H01L31/18;H01L31/0216;H01L31/0312;H01L31/0224 |
主分类号 |
H01L31/078 |
代理机构 |
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代理人 |
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主权项 |
1. An infrared photovoltaic device comprising a semiconductor substrate, a semiconductor photovoltaic (PV) layer on one side of said substrate, a metal layer on top of said PV layer, a first electrode layer on top of said metal layer, and a bottom metal electrode on the opposite side of said substrate from said PV layer, wherein said metal layer forms a Shottcky junction between said metal layer and said PV layer. |
地址 |
Tokyo-to JP |