| 发明名称 |
OXIDE SINTERED BODY, SPUTTERING TARGET USING IT, AND OXIDE FILM |
| 摘要 |
To provide an oxide sintered body for a sputtering target, which is capable of adding specific elements to from an n-type semiconductor layer to a p-type semiconductor layer surface of a compound thin-film solar cell.;An oxide sintered body which contains zinc (Zn) and at least one type of element (X) (excluding a case where magnesium is added alone) that has an ionization potential Ip of 4.5 eV≦Ip≦8.0 eV and an atomic radius d of 1.20 Å≦d≦2.50 Å and which has a composition ratio (atomic ratio) of 0.0001≦X/(Zn+X)≦0.20 and a sintered density of at least 95%. |
| 申请公布号 |
US2015295116(A1) |
申请公布日期 |
2015.10.15 |
| 申请号 |
US201314443201 |
申请日期 |
2013.11.18 |
| 申请人 |
TOSOH CORPORATION |
发明人 |
Akiike Ryo;Kuramochi Hideto;Tamano Kimiaki |
| 分类号 |
H01L31/072;H01J37/34;C23C14/34 |
主分类号 |
H01L31/072 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An oxide sintered body which contains zinc (Zn) and at least one type of element (X) (excluding a case where magnesium is added alone) that has an ionization potential Ip of 4.5 eV≦Ip≦8.0 eV and an atomic radius d of 1.20 Å≦d≦2.50 Å and which has a composition ratio (atomic ratio) of 0.0001≦X/(Zn+X)≦0.20 and a sintered density of at least 95%. |
| 地址 |
Shunan-shi, Yamaguchi JP |
