| 发明名称 |
FINFETS WITH CONTACT-ALL-AROUND |
| 摘要 |
An integrated circuit structure includes a semiconductor substrate, a semiconductor fin over the semiconductor substrate, a gate stack on a top surface and a sidewall of the semiconductor fin, a source/drain region on a side of the gate stack, and a contact plug encircling a portion of the source/drain region. |
| 申请公布号 |
US2015295089(A1) |
申请公布日期 |
2015.10.15 |
| 申请号 |
US201414250763 |
申请日期 |
2014.04.11 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
Huang Yu-Lien;Lee Tung Ying |
| 分类号 |
H01L29/78;H01L21/306;H01L29/66;H01L27/12;H01L21/02 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An integrated circuit structure comprising:
a semiconductor substrate; a semiconductor fin over the semiconductor substrate; a gate stack on a top surface and a sidewall of the semiconductor fin; a source/drain region on a side of the gate stack; and a contact plug encircling a first portion of the source/drain region. |
| 地址 |
Hsin-Chu TW |
