发明名称 |
High Speed Gallium Nitride Transistor Devices |
摘要 |
A low leakage current switch device (110) is provided which includes a GaN-on-Si substrate (11-43) covered by a passivation surface layer (43) in which a T-gate electrode with sidewall extensions (48) is formed and coated with a conformal passivation layer (49) so that the T-gate electrode sidewall extensions are spaced apart from the underlying passivation surface layer (43) by the conformal passivation layer (49). |
申请公布号 |
US2015295075(A1) |
申请公布日期 |
2015.10.15 |
申请号 |
US201514752066 |
申请日期 |
2015.06.26 |
申请人 |
Freescale Semiconductor, Inc. |
发明人 |
Green Bruce M.;Moore Karen E.;Hartin Olin |
分类号 |
H01L29/778;H01L29/47;H01L27/06;H01L49/02;H01L29/20;H01L29/423 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Austin TX US |