METHOD FOR PROCESSING A SEMICONDUCTOR WORKPIECE

摘要

A method for processing a semiconductor workpiece is provided, which may include: providing a semiconductor workpiece including a metallization layer stack disposed at a side of the semiconductor workpiece, the metallization layer stack including at least a first layer and a second layer disposed over the first layer, wherein the first layer contains a first material and the second layer contains a second material that is different from the first material; patterning the metallization layer stack, wherein patterning the metallization layer stack includes wet etching the first layer and the second layer by means of an etching solution that has at least substantially the same etching rate for the first material and the second material.

主权项

1. A method for processing a semiconductor workpiece, the method comprising:
providing a semiconductor workpiece comprising a substrate region at a back side of the workpiece, a device region at a front side of the workpiece, and a metallization disposed over a side of the substrate region opposite to the device region; and patterning the metallization, wherein patterning the metallization comprises etching the metallization.