发明名称 PLASMA PROCESSING DEVICE AND PLASMA PROCESSING METHOD
摘要 [Problem] To suppress effectively a so-called tilting phenomenon so as to improve production efficiency and reduce production costs. [Solution] In this capacitively coupled plasma etching device, an electro-magnet (32) is disposed in the upper portion of an upper electrode (26). The electro-magnet (32) has a core member (34) and coils (36, 38, 40, 42). The core member (34) has a structure wherein a pillar-shaped portion (44), a plurality of cylinder portions (46,48,50,52) and a back plate portion (54) are integrated. Under the control of a control unit (60), an electro-magnet drive circuit (56) is capable not only of selectively energizing any one of the coils (36, 38, 40, 42) with an arbitrary excitation current, but also of energizing an arbitrary combination of a plurality of the coils simultaneously with a common excitation current or separate arbitrary excitation currents.
申请公布号 WO2015155923(A1) 申请公布日期 2015.10.15
申请号 WO2015JP00997 申请日期 2015.02.26
申请人 TOKYO ELECTRON LIMITED 发明人 KONDO, TAKASHI
分类号 H01L21/3065;H01L21/31;H05H1/46 主分类号 H01L21/3065
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