SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, MODULE AND ELECTRONIC APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a novel semiconductor device using an oxide semiconductor; and especially provide a planar semiconductor device using an oxide semiconductor.SOLUTION: A semiconductor device has a transistor and a capacitative element. The transistor includes: a first conductive film; a first insulation film having a hydrogen-containing film; a second insulation film including an oxide insulation film; an oxide semiconductor film having a first region overlapping the first conductive film with each other and a pair of second regions sandwiching the first region; a pair of electrodes; a gate insulation film; and a second conductive film. The capacitative element has a lower electrode; an inter-electrode insulation film and an upper electrode. The lower electrode includes a material the same with a material included in the first conductive film. The inter-electrode insulation film has a third insulation film including a material the same with a material included in the first insulation film, and a fourth insulation film including a material the same with a material included in the gate insulation film. The upper electrode includes a material the same with a material included in the second conductive film and has a hydrogen-containing fifth insulation film on the transistor.