| 发明名称 |
HIGH PERFORMANCE LIGHT EMITTING DIODE WITH VIAS |
| 摘要 |
High performance light emitting diode with vias. In accordance with a first embodiment of the present invention, an article of manufacture includes a light emitting diode. The light emitting diode includes a plurality of filled vias configured to connect a doped region on one side of the light emitting diode to a plurality of contacts on the other side of the light emitting diode. The filled vias may comprise less that 10% of a surface area of the light emitting diode. |
| 申请公布号 |
US2015295151(A1) |
申请公布日期 |
2015.10.15 |
| 申请号 |
US201414466993 |
申请日期 |
2014.08.23 |
| 申请人 |
Invensas Corporation |
发明人 |
Mohammed Ilyas;Wang Liang |
| 分类号 |
H01L33/62;H01L33/50;H01L33/64;H01L33/06;H01L33/42;H01L33/58 |
主分类号 |
H01L33/62 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An article of manufacture comprising:
a light emitting diode comprising a plurality of filled vias configured to connect a doped region on one side of said diode to a plurality of contacts on the other side of said diode. |
| 地址 |
San Jose CA US |
