发明名称 |
METHOD FOR MANUFACTURING A TRANSISTOR DEVICE |
摘要 |
A method for manufacturing a transistor device comprising a channel layer, the method comprising:
- providing a substrate;
- epitaxially growing a strained layer on the substrate (defect free);
- epitaxially growing the channel layer on the epitaxially grown strained layer.
- proving a gate structure on the channel layer,
- selectively etching into the channel layer and at least partially in the epitaxially grown strained layer, thereby using the gate structure as a mask, and thereby creating a protrusion extending from the substrate, the protrusion comprising a portion of the channel layer and at least an upper portion of the epitaxially grown strained layer, allowing elastic relaxation in the portions. |
申请公布号 |
EP2930752(A2) |
申请公布日期 |
2015.10.14 |
申请号 |
EP20150159942 |
申请日期 |
2015.03.19 |
申请人 |
IMEC VZW;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, SEUNG HUN;ENEMAN, GEERT |
分类号 |
H01L29/10;H01L29/66;H01L29/78 |
主分类号 |
H01L29/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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