| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an inexpensive seed material for liquid phase epitaxial growth of silicon carbide. <P>SOLUTION: The seed material 12 for liquid phase epitaxial growth of single crystal silicon carbide has a surface layer including polycrystalline silicon carbide whose crystal polymorph is 3C. Through X-ray diffractometry of the surface layer, a primary diffraction peak corresponding to at least one of the (111) crystal plane, (200) crystal plane and (311) crystal plane is observed. The average crystallite diameter calculated from the at least one diffraction peak is larger than 700Å. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
