发明名称 磁気メモリ
摘要 <p>A magnetic memory includes a magnetic memory, including a ferromagnetic underlayer including a magnetic material, a non-magnetic intermediate layer disposed on the underlayer, a ferromagnetic data recording layer formed on the intermediate layer and having a perpendicular magnetic anisotropy, a reference layer connected to the data recording layer across a non-magnetic layer, and first and second magnetization fixed layers disposed in contact with a bottom face of the underlayer. The data recording layer includes a magnetization free region having a reversible magnetization and opposed to the reference layer, a first magnetization fixed region coupled to a first border of the magnetization free layer and having a magnetization fixed in a first direction, and a second magnetization fixed region coupled to a second border of the magnetization free layer and having a magnetization fixed in a second direction opposite to the first direction.</p>
申请公布号 JP5794892(B2) 申请公布日期 2015.10.14
申请号 JP20110237544 申请日期 2011.10.28
申请人 发明人
分类号 H01L21/8246;H01L27/105;H01L29/82;H01L43/08 主分类号 H01L21/8246
代理机构 代理人
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