| 摘要 |
PROBLEM TO BE SOLVED: To form nanowire of a group III-V compound on graphene.SOLUTION: In a step S101, metallic particulates 102 are formed on graphene 101. Graphene 101 may be formed on a substrate 103 composed of SiC having, e.g., a main surface of (0001) by a thermal decomposition method. In a step S102, a nanowire 104 of the group III-V compound is formed by an organometallic vapor phase growing method using the metallic particulates 102 as a catalyst (nanowire formation step). For instance, the nanowire 104 composed of GaP can be formed by the organometallic vapor phase growing method for supplying Ga source gas and P source gas. |
