| 摘要 |
<p>Provided is an inexpensive sputtering method whereby it becomes possible to control the thickness distribution of a film readily depending on the sputtering conditions such as the type of a target and the usage state of the target when the film is formed on a substrate, and it becomes also possible to simplify the constitution of an apparatus to be used. In the present invention, a substrate (W) to be treated is arranged so as to face a target (2) in a vacuum chamber (1), a sputtering gas is introduced into the vacuum chamber in which the degree of vacuum reaches a predetermined value, and a predetermined electric power is applied to the target to form plasma in the vacuum chamber, thereby sputtering the target. During the sputtering, a vertical static magnetic field is applied over the entire surface of the substrate and the intensity of the static magnetic field is increased stepwisely depending on the sputtering conditions to be eomployed. The sputtering conditions include a partial pressure of the sputtering gas in the vacuum chamber during sputtering and an electric power to be applied to the target, as well as the type of the target and the erosion state of the target.</p> |
