发明名称 リフロー法及び半導体装置の製造方法
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a reflow method which can tightly bury conductive materials of Cu inside fine recesses formed over an entire area of a substrate and which is optimal for obtaining wiring excellent in conductivity with high productivity. <P>SOLUTION: A reflow method of an embodiment in which a workpiece has recesses on a surface thereof and a Cu film is formed on the surface including the recesses and the recesses are filled with Cu by flowing the Cu film, comprises the steps of: adsorbing and holding the workpiece 11 with a ceramic plate 33b having attraction electrodes Cp, Cp by applying a preset voltage to the attraction electrodes; and heating a base 33a for supporting the ceramic plate to heat the workpiece at a preset temperature by heat transfer from the base. The workpiece is heated at the preset temperature such that applied voltage on the attraction electrodes is increased to the preset voltage before the workpiece reaches the preset temperature, and when the workpiece reaches the preset voltage, the applied voltage is decreased at a constant voltage drop speed and voltage application is stopped, and the workpiece is heated at the preset temperature. <P>COPYRIGHT: (C)2013,JPO&INPIT</p>
申请公布号 JP5794905(B2) 申请公布日期 2015.10.14
申请号 JP20110268333 申请日期 2011.12.07
申请人 发明人
分类号 H01L21/3205;H01L21/768;H01L23/532 主分类号 H01L21/3205
代理机构 代理人
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