发明名称 半導体装置及びそれを用いたSiPデバイス
摘要 A semiconductor device includes a logic circuit and an active element circuit. The logic circuit is provided with semiconductor elements formed in a semiconductor substrate. The active element circuit is provided with transistors formed using semiconductor layers formed over a diffusion insulating film formed above a semiconductor substrate. The active element circuit is controlled by the logic circuit.
申请公布号 JP5794879(B2) 申请公布日期 2015.10.14
申请号 JP20110213918 申请日期 2011.09.29
申请人 ルネサスエレクトロニクス株式会社 发明人 金子 貴昭;井上 尚也;林 喜宏
分类号 H01L21/8238;H01L21/3205;H01L21/336;H01L21/768;H01L21/822;H01L21/8234;H01L23/522;H01L25/065;H01L25/07;H01L25/18;H01L27/04;H01L27/06;H01L27/092;H01L29/786;H02M3/155 主分类号 H01L21/8238
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