发明名称 |
NON-VOLATILE MEMORY PROGRAMMING |
摘要 |
Some embodiments include a memory device and a method of programming memory cells of the memory device. One such method can include applying a signal to a line associated with a memory cell, the signal being generated based on digital information. The method can also include, while the signal is applied to the line, determining whether a state of the memory cell is near a target state when the digital information has a first value, and determining whether the state of the memory cell has reached the target state when the digital information has a second value. Other embodiments including additional memory devices and methods are described. |
申请公布号 |
EP2689424(A4) |
申请公布日期 |
2015.10.14 |
申请号 |
EP20120763999 |
申请日期 |
2012.03.23 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
MOSCHIANO, VIOLANTE;SANTIN, GIOVANNI;INCARNATI, MICHELE |
分类号 |
G11C16/34;G11C11/56;G11C16/10;G11C16/26 |
主分类号 |
G11C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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