| 摘要 |
<p>An object of the present invention is to provide a perovskite manganese oxide thin film that (1) allows a first order phase transition and (2) has A-site ordering. One aspect of the present invention provides a perovskite manganese oxide thin film 2 formed on a substrate 1, containing Ba and a rare earth element in the A sites, and having an (m10) orientation (m = 2n; 9 ‰¥ n ‰¥ 1).</p> |
