发明名称 |
Nano-structured light-emitting device and methods for manufacturing the same |
摘要 |
A nano-structured light-emitting device including a first semiconductor layer; a nano structure formed on the first semiconductor layer. The nano structure includes a nanocore, and an active layer and a second semiconductor layer that are formed on a surface of the nanocore, and of which the surface is planarized. A conductive layer surrounds sides of the nano structure, a first electrode is electrically connected to the first semiconductor layer and a second electrode is electrically connected to the conductive layer. |
申请公布号 |
US9159877(B2) |
申请公布日期 |
2015.10.13 |
申请号 |
US201314071411 |
申请日期 |
2013.11.04 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
Cha Nam-goo;Kim Dong-ho;Yoo Geon-wook;Lee Dong-hoon |
分类号 |
H01L33/04;B82Y20/00;H01L33/24;H01L33/10 |
主分类号 |
H01L33/04 |
代理机构 |
McDermott Will & Emery LLP |
代理人 |
McDermott Will & Emery LLP |
主权项 |
1. A nano-structured light-emitting device comprising:
a first semiconductor layer; at least one nano structure disposed on the first semiconductor layer and each of said at least one nano structure comprising a nanocore, and an active layer and a second semiconductor layer disposed on a surface of the nanocore, the active layer and the second semiconductor layer of the nano structure sharing a common planar upper surface that cuts through a thickness of the second semiconductor layer and is non-orthogonal to an interface between the active layer and the second semiconductor layer; a conductive layer surrounding sides of the at least one nano structure; a first electrode electrically connected to the first semiconductor layer; and a second electrode electrically connected to the conductive layer. |
地址 |
Suwon-Si, Gyeonggi-Do KR |