Silicon process compatible trench magnetic device

摘要

A mechanism is provided for integrating an inductor into a semiconductor. A circular or other closed loop trench is formed in a substrate with sidewalls connected by a bottom surface in the substrate. A first insulator layer is deposited on the sidewalls of the trench so as to coat the sidewalls and the bottom surface. A conductor layer is deposited on the sidewalls and the bottom surface of the trench so as to coat the first insulator layer in the trench such that the conductor layer is on top of the first insulator layer in the trench. A first magnetic layer is deposited on the sidewalls and bottom surface of the trench so as to coat the first insulator layer in the trench without filling the trench. The first magnetic layer deposited on the sidewalls forms an inner closed magnetic loop and an outer closed magnetic loop within the trench.

主权项

1. A method of integrating an inductor into a semiconductor, the method comprising:
providing a closed loop trench in a substrate, wherein the trench is formed with sidewalls connected by a bottom surface in the substrate; depositing a first insulator layer on the sidewalls of the trench so as to coat the sidewalls and the bottom surface; depositing a conductor layer on the sidewalls and the bottom surface of the trench so as to coat the first insulator layer in the trench such that the conductor layer is on top of the first insulator layer in the trench; depositing a first magnetic layer on the sidewalls and the bottom surface of the trench so as to coat the first insulator layer in the trench without filling the trench; wherein the first magnetic layer deposited on the sidewalls forms an inner closed magnetic loop and an outer closed magnetic loop within the trench; wherein an interior conductor path is formed by the conductor layer at an inside wall of the trench, such that the interior conductor path connects to a first exterior conductor connection; wherein a second exterior conductor connection separately connects to the conductor layer formed on an outside wall of the trench; and wherein an electrical path from the first exterior conductor connection to the second exterior conductor connection by way of the conductor layer in the trench forms a continuous electrical path that passes through the inner and outer closed magnetic loops.