Auto-refresh method for SONOS non-volatile memory array

摘要

A method for performing auto-refresh of a SONOS memory in a field programmable gate array in a system, includes sensing an auto-refresh condition, selecting a memory segment that has not yet been refreshed, storing the contents of memory segment, erasing the memory cells in the memory segment, and reprogramming the memory cells in the memory segment, until all of the memory segments have been reprogrammed.

主权项

1. In a memory array disposed in a system, the memory array including a plurality of memory cells having a uniform charge-loss rate, a method for performing auto-refresh of the memory array the method comprising:
a) sensing an auto-refresh condition; b) selecting a memory segment of the memory array, the memory segment including a plurality of memory cells that have not been refreshed; c) storing the contents of the memory cells from the memory segment; d) erasing the memory cells in the memory segment; e) reprogramming the memory cells in the memory segment with the stored contents of the memory cells; and f) repeating b) through e) until all of the memory segments have been reprogrammed.