发明名称 |
Method for producing graphene, and graphene |
摘要 |
A technique for forming graphene which solves problems involved in formation of graphene by a thermal CVD method and a resin carbonization method that a high temperature is used and the treatment time is long and can form graphene at a lower temperature in a shorter time is provided. The above problems are solved by performing hydrogen plasma treatment on a copper foil substrate having an organic substance applied thereon by use of a surface wave microwave plasma treatment device and forming graphene on the copper foil substrate by the hydrogen plasma treatment. |
申请公布号 |
US9156699(B2) |
申请公布日期 |
2015.10.13 |
申请号 |
US201313963369 |
申请日期 |
2013.08.09 |
申请人 |
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY |
发明人 |
Yamada Takatoshi;Kim Jaeho;Ishihara Masatou;Koga Yoshinori;Hasegawa Masataka;Iijima Sumio |
分类号 |
C01B31/04;B82Y30/00;B82Y40/00 |
主分类号 |
C01B31/04 |
代理机构 |
Lowe Hauptman & Ham, LLP |
代理人 |
Lowe Hauptman & Ham, LLP |
主权项 |
1. A method for producing graphene, comprising performing a surface wave microwave plasma treatment using hydrogen-containing gas on a metal substrate having an organic substance thereon under a low pressure of 50 Pa or lower while a temperature of the metal substrate having the organic substance thereon inside a surface wave microwave plasma treatment device is set to 500° C. or lower, thereby growing graphene on a surface of the organic substance. |
地址 |
Tokyo JP |