发明名称 Method for producing graphene, and graphene
摘要 A technique for forming graphene which solves problems involved in formation of graphene by a thermal CVD method and a resin carbonization method that a high temperature is used and the treatment time is long and can form graphene at a lower temperature in a shorter time is provided. The above problems are solved by performing hydrogen plasma treatment on a copper foil substrate having an organic substance applied thereon by use of a surface wave microwave plasma treatment device and forming graphene on the copper foil substrate by the hydrogen plasma treatment.
申请公布号 US9156699(B2) 申请公布日期 2015.10.13
申请号 US201313963369 申请日期 2013.08.09
申请人 NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY 发明人 Yamada Takatoshi;Kim Jaeho;Ishihara Masatou;Koga Yoshinori;Hasegawa Masataka;Iijima Sumio
分类号 C01B31/04;B82Y30/00;B82Y40/00 主分类号 C01B31/04
代理机构 Lowe Hauptman & Ham, LLP 代理人 Lowe Hauptman & Ham, LLP
主权项 1. A method for producing graphene, comprising performing a surface wave microwave plasma treatment using hydrogen-containing gas on a metal substrate having an organic substance thereon under a low pressure of 50 Pa or lower while a temperature of the metal substrate having the organic substance thereon inside a surface wave microwave plasma treatment device is set to 500° C. or lower, thereby growing graphene on a surface of the organic substance.
地址 Tokyo JP