| 发明名称 | Recessed transistors containing ferroelectric material | ||
| 摘要 | Some embodiments include transistor constructions having a first insulative structure lining a recess within a base. A first conductive structure lines an interior of the first insulative structure, and a ferroelectric structure lines an interior of the first conductive structure. A second conductive structure is within a lower region of the ferroelectric structure, and the second conductive structure has an uppermost surface beneath an uppermost surface of the first conductive structure. A second insulative structure is over the second conductive structure and within the ferroelectric structure. A pair of source/drain regions are adjacent an upper region of the first insulative structure and are on opposing sides of the first insulative structure from one another. | ||
| 申请公布号 | US9159829(B1) | 申请公布日期 | 2015.10.13 |
| 申请号 | US201414508912 | 申请日期 | 2014.10.07 |
| 申请人 | Micron Technology, Inc. | 发明人 | Ramaswamy Durai Vishak Nirmal |
| 分类号 | H01L29/78;H01L29/423 | 主分类号 | H01L29/78 |
| 代理机构 | Wells St. John P.S. | 代理人 | Wells St. John P.S. |
| 主权项 | 1. A transistor construction, comprising: a first insulative structure lining a recess within a base; a first conductive structure lining an interior of the first insulative structure; a ferroelectric structure lining an interior of the first conductive structure; a second conductive structure within a lower region of the ferroelectric structure; the second conductive structure having an uppermost surface beneath an uppermost surface of the first conductive structure; a second insulative structure over the second conductive structure and within the ferroelectric structure; and a pair of source/drain regions adjacent an upper region of the first insulative structure and on opposing sides of the first insulative structure from one another. | ||
| 地址 | Boise ID US | ||