发明名称 CMOS charge pump circuit
摘要 The present invention discloses a device of CMOS image sensor, exactly, relates to a kind of CMOS charge pump circuit. The invention compromises: two current mirrors and two operational amplifiers are added into the CMOS charge pump circuit. The feed-through current is suppressed when signal switches in the said circuit. It solved the problem of the big voltage jump of the output voltage when the logic signal switches. It guarantees the stabilities of the circuit and the output voltage.
申请公布号 US9160952(B2) 申请公布日期 2015.10.13
申请号 US201314091337 申请日期 2013.11.26
申请人 Shanghai Huali Microelectronics Corporation 发明人 Zhang Ning;Wang Benyan
分类号 H04N5/335;H04N9/04;H04N5/369;H04N5/3745;H04N5/357 主分类号 H04N5/335
代理机构 代理人 Eisenberg Michael D.
主权项 1. A CMOS charge pump circuit, comprising: a reference current, an ground end, and an eleventh transistor set between the reference current and the ground end; a first current steering switch and a second current steering switch, wherein the first current steering switch is coupled with a third transistor, the second current steering switch is coupled with an eighth transistor, and an output voltage is provided on a connected node between the first current steering switch and the second current steering switch; a mirror current generator, wherein the mirror current generator comprises multiple transistors to form two mirror currents of the reference current, comprising a first mirror current IX and a second mirror current IY; the first mirror current IX is supplied to the first current steering switch; the second mirror current IY is supplied to the second current steering switch; and the mirror current generator is set between a supply voltage of the CMOS charge pump circuit and the ground end.
地址 Shanghai CN