Memory element and memory device

摘要

There are provided a memory element and a memory device in which the state of erasing remains stable by deactivation of a localized site(s) formed inside of a resistance change layer. The memory element includes a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer including an n-type dopant or a p-type dopant, and disposed on the first electrode side, and an ion source layer disposed between the resistance change layer and the second electrode.

主权项

1. A memory element, comprising:
a first electrode, a memory layer, and a second electrode in this order, wherein,
the memory layer includes:
(a) a resistance change layer including (i) tellurium, sulfur, or selenium, and (ii) an n-type dopant or a p-type dopant, the resistance change layer being disposed on the first electrode, and(b) an ion source layer in contact with the resistance change layer, the ion source layer having mobile ions that diffuse into the resistance change layer when a first voltage is applied, andthe n-type or the p-type dopant of the resistance change layer has a concentration that is approximately equal to an amount of mobile ions that remains in the resistance change layer after the mobile ions move from the resistance change layer to the ion source layer when a second voltage is applied, the n-type or the p-type dopant and its concentration being effective to deactivate localized sites that occur in the resistance change layer.