发明名称 |
Apparatuses and methods for operating a memory device |
摘要 |
Subject matter described pertains to apparatuses and methods for operating a memory device. |
申请公布号 |
US9158607(B2) |
申请公布日期 |
2015.10.13 |
申请号 |
US201414171051 |
申请日期 |
2014.02.03 |
申请人 |
Micron Technology, Inc. |
发明人 |
Ha Chang Wan |
分类号 |
G06F11/00;G06F11/07;G11C29/00;G06F11/20;G11C15/00;G11C29/08;G11C29/44 |
主分类号 |
G06F11/00 |
代理机构 |
Knobbe, Martens, Olson and Bear, LLP |
代理人 |
Knobbe, Martens, Olson and Bear, LLP |
主权项 |
1. An apparatus, comprising:
memory arrays including redundant groups of memory cells and non-redundant groups of memory cells; and a memory cache operatively coupled to the memory arrays, wherein the memory cache includes groups of memory cache memory cells, wherein the apparatus is operable to functionally replace a problematic one of the non-redundant groups of memory cells with one of the redundant groups of memory cells, while also being operable to functionally replace a problematic one of the groups of memory cells of the memory cache with at least two of the redundant groups of memory cells of the memory arrays, wherein replacing the problematic one of the groups of memory cells of the memory cache comprises replacing one problematic memory cell of the memory cache with at least two redundant memory cells of the memory arrays. |
地址 |
Boise ID US |