| 发明名称 | Schottky barrier diode and method of manufacturing the same | ||
| 摘要 | A schottky barrier diode includes: an n− type epitaxial layer that is disposed at a first surface of an n+ type silicon carbide substrate; a plurality of n type pillar areas that are disposed at the inside of the n− type epitaxial layer and that are disposed at a first portion of the first surface of the n+ type silicon carbide substrate; a p type area that is disposed at the inside of the n− type epitaxial layer and that is extended in a direction perpendicular to the n type pillar areas; a plurality of p+ areas in which the n− type epitaxial layer is disposed at a surface thereof and that are separated from the n type pillar areas and the p type area; a schottky electrode that is disposed on the n− type epitaxial layer and the p+ areas; and an ohmic electrode that is disposed at a second surface of the n+ type silicon carbide substrate. | ||
| 申请公布号 | US9159847(B2) | 申请公布日期 | 2015.10.13 |
| 申请号 | US201314098359 | 申请日期 | 2013.12.05 |
| 申请人 | HYUNDAI MOTOR COMPANY | 发明人 | Lee Jong Seok;Hong Kyoung-Kook;Chun Dae Hwan;Jung Youngkyun |
| 分类号 | H01L31/0312;H01L29/872;H01L29/16;H01L29/66;H01L29/06;H01L29/08 | 主分类号 | H01L31/0312 |
| 代理机构 | McDermott Will & Emery LLP | 代理人 | McDermott Will & Emery LLP |
| 主权项 | 1. A schottky barrier diode, comprising: an n− type epitaxial layer that is disposed at a first surface of an n+ type silicon carbide substrate; a plurality of n type pillar areas that are disposed at an inside of the n− type epitaxial layer and that are disposed at a first portion of the first surface of the n+ type silicon carbide substrate; a p type area that is disposed at the inside of the n− type epitaxial layer and that is extended in a direction perpendicular to the n type pillar areas; a plurality of p+ areas in which the n− type epitaxial layer is disposed at a surface thereof and that are separated from the n type pillar areas and the p type area; a schottky electrode that is disposed on the n− type epitaxial layer and the p+ areas; and an ohmic electrode that is disposed at a second surface of the n+ type silicon carbide substrate, wherein the p type area is disposed between an upper surface of the n type pillar areas and the first surface of the n+ type silicon carbide substrate. | ||
| 地址 | Seoul KR | ||