发明名称 |
Tungsten deposition process using germanium-containing reducing agent |
摘要 |
Methods for depositing low resistivity tungsten in features of substrates in semiconductor processing are disclosed herein. Methods involve using a germanium-containing reducing agent during tungsten nucleation layer deposition to achieve thin, low resistivity nucleation layers. |
申请公布号 |
US9159571(B2) |
申请公布日期 |
2015.10.13 |
申请号 |
US201414173733 |
申请日期 |
2014.02.05 |
申请人 |
Lam Research Corporation |
发明人 |
Humayun Raashina;Manandhar Sudha;Danek Michal |
分类号 |
H01L21/20;H01L21/285;H01L21/67;H01L21/768;C23C16/02;C23C16/04;C23C16/14;C23C16/455 |
主分类号 |
H01L21/20 |
代理机构 |
Weaver Austin Villenuve & Sampson LLP |
代理人 |
Weaver Austin Villenuve & Sampson LLP |
主权项 |
1. A method of filling a feature on a substrate with tungsten, the method comprising:
prior to depositing a bulk tungsten layer, forming a tungsten nucleation layer by exposing the feature to alternating pulses of a germanium-containing reducing agent and a tungsten-containing precursor. |
地址 |
Fremont CA US |