| 主权项 |
1. A method of forming a capacitor, comprising:
depositing inner conductive capacitor electrode material over a substrate, the inner conductive capacitor electrode material being selected from the group consisting of conductively doped silicon, elemental titanium, elemental tungsten, elemental ruthenium, elemental platinum, and mixtures thereof; depositing a dielectric metal oxide layer of a first phase to a thickness no greater than 75 Angstroms over the inner conductive capacitor electrode material, the first phase dielectric metal oxide layer having a k of at least 15 and comprising one or more of HfO2, TiO2, ZrO2, Ta2O5, and Nb2O5; providing one or more different capacitor dielectric layers intermediate the first phase dielectric metal oxide and the inner conductive capacitor electrode material; depositing amorphous conductive RuO2 over and into physical contact with the dielectric metal oxide layer; after depositing the conductive RuO2, annealing the RuO2 and the dielectric metal oxide layer at a temperature below 500° C.; the RuO2 in physical contact with the dielectric metal oxide during the annealing facilitating a change of the dielectric metal oxide layer from the first phase to a second crystalline phase having a higher k than the first phase; after the annealing, etching utilizing an etch chemistry comprising O3 to selectively remove at least some of the RuO2; and incorporating the annealed dielectric metal oxide layer into a capacitor dielectric region of a capacitor construction comprising the inner conductive capacitor electrode material and an outer conductive capacitor electrode material comprising the annealed conductive RuO2. |
