Method of programming a nonvolatile memory device

摘要

In method of programming a nonvolatile memory device including first and second cell strings that are coupled to one bitline, a first channel of the first cell string and a second channel of the second cell string are precharged by applying a first voltage to the bitline, one cell string is selected from the first and second cell strings, and a memory cell included in the selected cell string is programmed by applying a second voltage greater than a ground voltage and less than the first voltage to the bitline.

主权项

1. A method of programming a nonvolatile memory device including first and second cell strings that are coupled to one bitline, the method comprising:
precharging a first channel of the first cell string and a second channel of the second cell string by applying a first voltage to the bitline; selecting one cell string from the first and second cell strings; and programming a memory cell included in the selected cell string by applying to the bitline a second voltage greater than a ground voltage and less than the first voltage, wherein the first channel of the first cell string and the second channel of the second cell string are precharged to a precharge voltage level, and wherein, when the memory cell included in the selected cell string is programmed, a voltage of a channel of the selected cell string decreases to a voltage level that is less than the precharge voltage level, and a voltage of a channel of an unselected cell string increases to a boosted voltage level greater than the precharge voltage level.