发明名称 |
Multi-level memory apparatus and data sensing method thereof |
摘要 |
A multi-level memory apparatus includes two or more current paths configured to pass currents having different levels, a memory cell selectively coupled to the two or more current paths, and a cell current copy unit configured to copy a cell current flowing through the memory cell. |
申请公布号 |
US9159411(B2) |
申请公布日期 |
2015.10.13 |
申请号 |
US201313935407 |
申请日期 |
2013.07.03 |
申请人 |
SK Hynix Inc.;Korea Advanced Institute of Science and Technology |
发明人 |
Park Chul Hyun;Ryu Seung Tak;Kwon Ji Wook;Jin Dong Hwan |
分类号 |
G11C7/00;G11C13/00;G11C11/56 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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主权项 |
1. A multi-level memory apparatus comprising:
two or more current paths configured to pass currents having different levels; a memory cell selectively coupled to the two or more current paths; a cell current copy unit configured to copy a cell current flowing through the memory cell and output a copied cell current; a comparison unit configured to compare the copied cell current flowing through the cell current copy unit with a copied comparison current; a data output unit configured to convert an output signal of the comparison unit and output a comparison signal; a comparison current output unit configured to output a comparison current using the comparison signal outputted from the data output unit; and a comparison current copy unit configured to copy the comparison current and output the copied comparison current. |
地址 |
Icheon KR |