发明名称 Systems and methods for clearance monitoring in storage media
摘要 A method for measuring the head-disk clearance between a slider and a disk includes measuring a first resistance with a first bias applied to an embedded contact sensor of the slider, measuring a second resistance with a second bias applied to the embedded contact sensor of the slider, and determining the head-disk clearance based at least in part on a difference between the first resistance and the second resistance. A system includes a disk drive, a slider comprising an embedded contact sensor, and circuitry to apply at least two bias voltages to the embedded contact sensor, measure at least two resistances of the embedded contact sensor based on the application of the at least two bias voltages, and to determine the head-disk clearance based at least in part on a difference between the at least two resistances.
申请公布号 US9159348(B2) 申请公布日期 2015.10.13
申请号 US201314109603 申请日期 2013.12.17
申请人 HGST NETHERLANDS B.V. 发明人 Li Jianhua;Xu Junguo;Shiramatsu Toshiya;Sato Takehiro
分类号 G11B21/02;G11B5/60 主分类号 G11B21/02
代理机构 代理人
主权项 1. A method for measuring the head-disk clearance between a slider and a disk, the method comprising: with a first bias voltage applied to an embedded contact sensor of the slider, collecting data correlating the resistances of the embedded contact sensor of the slider to the head-disk clearance; with a second bias voltage applied to the embedded contact sensor of the slider, collecting data correlating the resistances of the embedded contact sensor of the slider to the head-disk clearance; calculating the differences between resistances of the embedded contact sensor with the first and second bias voltages applied; measuring a first resistance with the first bias applied to the embedded contact sensor of the slider; measuring a second resistance with the second bias applied to the embedded contact sensor of the slider; and determining the head-disk clearance based at least in part on using the calculated differences between the resistances of the embedded contact sensor with the first and second bias voltages applied.
地址 Amsterdam NL