发明名称 |
Fin field-effect transistor (FinFET) device formed using a single spacer, double hardmask scheme |
摘要 |
Approaches for providing a single spacer, double hardmask dual-epi FinFET are disclosed. Specifically, at least one approach for providing the FinFET includes: forming a set of spacers along each sidewall of a plurality of fins of the FinFET device; forming a first ultra-thin hardmask over the plurality of fins; implanting the first ultra-thin hardmask over a first set of fins from the plurality of fins; removing the first ultra-thin hardmask over a second set of fins from the plurality of fins untreated by the implant; forming an epitaxial (epi) layer over the second set of fins; forming a second ultra-thin hardmask over the FinFET device; implanting the second ultra-thin hardmask; removing the second ultra-thin hardmask over the first set of fins; and growing an epi layer over the first set of fins. |
申请公布号 |
US9159630(B1) |
申请公布日期 |
2015.10.13 |
申请号 |
US201414330063 |
申请日期 |
2014.07.14 |
申请人 |
GLOBALFOUNDRIES INC. |
发明人 |
Wei Andy Chih-Hung;Yang Dae Geun;Choi Dae-han |
分类号 |
H01L21/336;H01L29/76;H01L21/8238;H01L27/092 |
主分类号 |
H01L21/336 |
代理机构 |
Williams Morgan, P.C. |
代理人 |
Williams Morgan, P.C. |
主权项 |
1. A method for forming a fin field-effect transistor (FinFET) device, the method comprising:
forming a set of spacers along each sidewall of a plurality of fins of the FinFET device; forming a first ultra-thin hardmask over the FinFET device; implanting the first ultra-thin hardmask over a first set of fins from the plurality of fins; removing the first ultra-thin hardmask over a second set of fins from the plurality of fins untreated by the implant; forming an epitaxial (epi) layer over the second set of fins; forming a second ultra-thin hardmask over the FinFET device; implanting the second ultra-thin hardmask; removing the second ultra-thin hardmask over the first set of fins; and growing an epi layer over the first set of fins. |
地址 |
Grand Cayman KY |