Three dimensional memory device having stacked conductive channels

摘要

A method includes forming a first group of memory cells coupled to a first conductive channel. The first conductive channel is substantially perpendicular relative to a surface of a substrate. The method further includes forming a second group of memory cells coupled to a second conductive channel. The second conductive channel is electrically coupled to the first conductive channel and is substantially perpendicular relative to the surface of the substrate.

主权项

1. A method comprising:
forming a non-volatile memory having a three-dimensional (3D) memory configuration, wherein forming the non-volatile memory includes:
forming a first group of memory cells coupled to a first conductive channel, the first conductive channel substantially perpendicular relative to a surface of a substrate;forming a first portion of a connector within a hole through an etch stop layer of the non-volatile memory; andforming a second group of memory cells, the second group of memory cells coupled to a second conductive channel, wherein the second conductive channel is electrically coupled via the connector to the first conductive channel and is substantially perpendicular relative to the surface of the substrate, wherein the etch stop layer is positioned between the first group of memory cells and the second group of memory cells, and wherein a second portion of the connector extends along a surface of the etch stop layer that is proximate to the first group of memory cells or the second group of memory cells.