Method and system for repairing wafer defects

摘要

A method of lithographic defect detection and repair is disclosed. In an exemplary embodiment, the method of patterning a workpiece comprises receiving a mask for patterning a workpiece. The mask is inspected for defects, and a mask defect is identified that is repairable in the workpiece. The workpiece is lithographically exposed using the mask, and a defect is repaired within the workpiece based on the identified mask defect. The method can further comprise comparing defects across the workpiece to determine repeating defects and determining a spacing between the repeating defects. A distance between a first focal point and a second focal point of a lithographic system can be configured to correspond to the spacing between the repeating defects. Thus, a first repeating defect and a second repeating defect can be repaired concurrently.

主权项

1. A method of patterning a workpiece, the method comprising:
receiving a mask for patterning a workpiece; inspecting the mask for defects; identifying a mask defect that is repairable in the workpiece; lithographically exposing the workpiece using the mask; and using a direct-write lithographic system, repairing a defect within the workpiece based on the identified mask defect.