Phase change material cell with piezoelectric or ferroelectric stress inducer liner

摘要

An example embodiment disclosed is a process for fabricating a phase change memory cell. The method includes forming a bottom electrode, creating a pore in an insulating layer above the bottom electrode, depositing piezoelectric material in the pore, depositing phase change material in the pore proximate the piezoelectric material, and forming a top electrode over the phase change material. Depositing the piezoelectric material in the pore may include conforming the piezoelectric material to at least one wall defining the pore such that the piezoelectric material is deposited between the phase change material and the wall. The conformal deposition may be achieved by chemical vapor deposition (CVD) or by atomic layer deposition (ALD).

主权项

1. A method for fabricating a phase change memory cell, the method comprising:
creating a pore in an insulating layer; depositing piezoelectric material in the pore; and depositing phase change material in the pore proximate the piezoelectric material.