LED on silicon substrate using zinc-sulfide as buffer layer

摘要

A vertical GaN-based blue LED has an n-type GaN layer that was grown over a ZnS layer that in turn was grown directly on a silicon substrate. In one example, the ZnS layer is a transitional buffer layer that is 50 nm thick, and the n-type GaN layer is at least 2000 nm thick. Growing the n-type GaN layer on the ZnS buffer layer reduces lattice defect density in the n-type layer. The ZnS buffer layer provides a good lattice constant match with the silicon substrate and provides a compound polar template for subsequent GaN growth. After the epitaxial layers of the LED are formed, a conductive carrier is wafer bonded to the structure. The silicon substrate and the ZnS buffer layer are then removed. Electrodes are added and the structure is singulated to form finished LED devices.

主权项

1. A method of manufacturing a light emitting device, comprising:
forming a zinc-sulfide (ZnS) layer directly on a silicon substrate; forming a zinc-telluride (ZnTe) layer directly on the ZnS layer; forming a template layer on the ZnTe layer; forming an epitaxial light emitting device structure on the template layer, wherein the epitaxial light emitting device structure includes an n-type semiconductor layer, a p-type semiconductor layer and an active layer between the n-type semiconductor layer and the p-type semiconductor layer; forming a reflective layer on the epitaxial light emitting device structure; forming a barrier metal layer on the reflective layer; forming a first bond metal layer on the barrier metal layer thereby forming a first structure; bonding a conductive carrier on the first bond metal layer of the first structure thereby forming a second structure, wherein an adhesion and the barrier metal layer are formed on a first surface of the conductive carrier, and the adhesion and the barrier metal layer are sandwiched between the conductive carrier and the first bond metal layer; and removing layers from the first structure from a side of the silicon substrate thereby exposing a surface of the n-type semiconductor layer.