Method for manufacturing semiconductor light emitting device

摘要

A semiconductor light emitting device having high reliability and excellent light distribution characteristics can be provided with an n-electrode arranged on a light extraction surface on the side opposite to the surface whereupon a semiconductor stack is mounted on a substrate. A plurality of convexes are arranged on a first convex region and a second convex region on the light extraction surface. The second convex region adjoins the interface between the n-electrode and the semiconductor stack, between the first convex region and the n-electrode. The base end of the first convex arranged in the first convex region is positioned closer to a light emitting layer than the interface between the n-electrode and the semiconductor stack, and the base end of the second convex arranged in the second convex region is positioned closer to the interface between the n-electrode and the semiconductor stack than the base end of the first convex.

主权项

1. A method for fabricating a semiconductor light emitting device, comprising steps of:
forming a semiconductor stack including a light emitting layer between an n-type semiconductor layer and a p-type semiconductor layer; forming a convex on an electrode formation planned area of a light extraction surface of the semiconductor stack; forming an electrode on the convex; forming a mask which entirely covers an upper surface and a side face of the electrode; etching the light extraction surface of the semiconductor stack to form a first convex area having a first convex; removing the mask; and etching the light extraction surface of the semiconductor stack to form a second convex area having a second convex of which a height is lower than a height of the first convex.