Solid-state imaging device with channel stop region with multiple impurity regions in depth direction

摘要

Channel stop sections formed by multiple times of impurity ion implanting processes. Four-layer impurity regions are formed across the depth of a semiconductor substrate (across the depth of the bulk), so that a P-type impurity region is formed deep in the semiconductor substrate; thus, incorrect movement of electric charges is prevented. Other four-layer impurity regions of another channel stop section are decreased in width step by step across the depth of the substrate, so that the reduction of a charge storage region of a light receiving section due to the dispersion of P-type impurity in the channel stop section is prevented in the depth of the substrate.

主权项

1. A solid-state imaging device comprising:
a substrate; a photosensor in the substrate; and a channel stop section at a side of the photosensor in the substrate, wherein, the channel stop section has a plurality of adjoining impurity regions including at least a first impurity region and a second impurity region associated with the first impurity region along a direction of increasing depth of the substrate, and the cross-sectional area of the second impurity region is smaller than that of the first impurity region.