Fin structure of semiconductor device

摘要

A fin structure of a semiconductor device, such as a fin field effect transistor (FinFET), and a method of manufacture, is provided. In an embodiment, trenches are formed in a substrate, and a liner is formed along sidewalls of the trenches, wherein a region between adjacent trenches define a fin. A dielectric material is formed in the trenches. Portions of the semiconductor material of the fin are replaced with a second semiconductor material and a third semiconductor material, the second semiconductor material having a different lattice constant than the substrate and the third semiconductor material having a different lattice constant than the second semiconductor material. Portions of the second semiconductor material are oxidized.

主权项

1. A fin field effect transistor (FinFET) comprising:
a substrate; a fin structure extending from the substrate, the fin structure comprising a lower portion, an upper portion, and a middle portion interposed between the lower portion and the upper portion, the middle portion having a lattice constant different than lattice constants of the lower portion and the upper portion, the middle portion having oxidized portions along opposing sidewalls; isolation regions adjacent opposing sides of the fin structure; and a liner interposed between the isolation regions and the oxidized portions.