Transistor outline housing and method for producing same

摘要

A transistor outline housing is provided that has bonding wires on an upper surface. The bonding wires are reduced in length and have connection leads with an excess length at an end opposite the bonding end.

主权项

1. A transistor outline housing, comprising:
a device including a receiver diode or a transmitter diode; a base that receives the device; and bonding wires connecting the device to at least one connection lead, the connection lead passing through a passage in the base, being insulated from the base, and being secured in the base by a sealing compound; wherein the housing has a configuration to reduce a length of the bonding wires, the configuration being selected from the group consisting of: providing the connection lead with an enlarged cross section at a side of the device as compared to a cross section in the passage, providing the connection lead with an asymmetric arrangement in the passage, angling the connection lead, and protruding the device into an area of the passage; and wherein, in order to at least partially compensate for an increase in capacity resulting thereby, the connection lead has an excess length beyond the passage at a side of an electrical connection; wherein the bonding wires have an inductance Lb and the connection lead in the passage has a capacitance Cd; and wherein the connection lead beyond the passage has an excess length that has associated therewith an inductance Lü, so that an Lb-Cd-Lü circuit is defined, and wherein the Lb-Cd-Lü circuit has an impedance in the range of between 30 and 120Ω, with Lb between 80 pH and 300 pH, Cd between 0.065 pF and 0.024 pF, and Lü between 80 pH and 300 pH.